株式会社フューチャーインク

EN/JP

Printed Device

Thin, Light and Soft
Film Sensor that can Design 3D Space

Future Ink productizes film sensors with the printed electronics technology that is used for electronic device production using printing processes.
This supports production with a large area and enables mass-production and cost-reduction
as well as free design of sensing space thanks to devices that are less than 0.5 mm, lightweight and flexible.

Piezoelectric Sensor Sheet

This pressure sensor sheet uses an organic piezoelectric material that generates voltage from vibrations or bending.
The sheets excel at high-sensitive signal measurement and also enable measuring very weak vital signs such as pulse waves and breathing without restraining body motion.
This can also be applied to bed sensors by using printing processes to increase the sensor sheet size.

Printable Materials

Printed Electronics Materials that Require High-Level Functions and Performance

We are uniquely developing and productizing silver nanoparticle conductive ink that forms electronic circuits and organic semiconductor ink for thin film transistors as high functional materials specialized as printed electronics.
Printed electronics materials offer high functions and performance going beyond electrical characteristics for performance improvement of devices to also offer printing suitability for printing equipment and adhesiveness with a base material that determines durability.

Silver Nanoparticle Ink for Inkjets
F-Nano IJ100/200

Adaptive to high-definition 1 pL discharge / Supports low temperature sintering and PET base material / Stable for storage and discharge

Silver nanoparticle ink is made by dispersing low temperature sintered type silver nanoparticles in organic solvent.
The ink has high conductivity with resistance as low as 10 µΩ·cm even while low temperature sintering of less than 120 °C is also possible.

○Sintering temperature and volume resistivity 120 °C → 10 µΩ·cm
○Ink storage stability (5 °C)
○Print pattern example
IJ100FD
 
IJ200FD
○Cross-sectional shape of print pattern
 Flat wiring can be formed in combination with base material

Inks for flexo and letterpress reversing offset are under development in addition to ink for inkjets.

N-Type Organic Semiconductor TU-1 / TU-3

N-type organic semiconductor material offers high stability in air and high mobility.
Printing processes can be applied since it is capable of dissolving in organic solvents.
Forming high performance complementary circuits by combining with P-type organic semiconductor is also possible.

High mobility / Coated film forming is available / Stable in air

TU-1: Deposition / Coated film forming is available
Mobility Less than 1cm2/Vs(@Vsd=100V)
TU-3: Coated film forming is available
Mobility ≧ 3 cm2/Vs(@Vsd=100V)
○Characteristics

TU-3 transistor characteristics
Mobility = 2.3 cm2/Vs
on/off ratio = 107

Structure: BG-TC@SiO₂/Si
Electrode: Au
Film forming: TU-3/CHCl₃ spin coating

Applicable to Complementary Circuits

A Unique Solution-Processable n‑Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors. Mamada, et al., Chemistry of Materials, 2015, 27, 141.

Organic Complementary Inverter with Single SAM Process. Takeda, et al., applied sciences, 2018, 8, 1331.
Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing. Takeda, et al., Advanced Electronic Materials, 2018, 4, 1700313.